A 1 cm × 1 cm in0.53Ga0.47As-In 0.52Al0.48As avalanche photodiode array

IEEE Photonics Technology Letters

Volumn 18, Issue 1, 2006, Pages 19-21

  Clark, William R ^a,b   Davis, Andrew ^c   Roland, Mark ^c   Vaccaro, Kenneth ^d  

^a IEEE   (United States)

^b OPTOGRATION INC   (United States)

^c SOLID STATE SCIENTIFIC CORPORATION   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Avalanche multiplication; Avalanche photodiode (APD); Infrared detector; Photodetector; Photodiode; Photodiode array

Indexed keywords

AVALANCHE MULTIPLICATION; DARK CURRENT; PHOTODIODE ARRAY; STANDARD DEVIATION;

BANDWIDTH; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; INFRARED DETECTORS; SEMICONDUCTING INDIUM COMPOUNDS;

AVALANCHE PHOTODIODES;

EID: 34047228695     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.860032     Document Type: Article

References (8)

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