RF characterization of epitaxial graphene nano ribbon field effect transistor

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2011, Pages

  Meng, N ^a   Fernandez, J Ferrer ^a   Pichonat, E ^a   Lancry, O ^a   Vignaud, D ^a   Dambrine, G ^a   Happy, H ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

characterization; graphene; RF; ribbon; SiC; transistor

Indexed keywords

AFM; CURRENT GAINS; CUT-OFF; EPITAXIAL GRAPHENE; HALL MEASUREMENTS; HIGH-SPEED ELECTRONICS; MAXIMUM OSCILLATION FREQUENCY; RF; RF CHARACTERIZATION; RIBBON; SIC;

CHARACTERIZATION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; PYROLYSIS; RAMAN SPECTROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 80052322072     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2011.5972627     Document Type: Conference Paper

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