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Volumn 519, Issue 22, 2011, Pages 7864-7870
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Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process
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Author keywords
Hexamethyldisiloxane; Ion energy; Plasma assisted chemical vapor deposition; Plasma diagnostics; RF plasma; Silicon oxide; Thin films
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Indexed keywords
DEFECT-FREE;
DEPOSITED FILMS;
EMISSIVE PROBE;
FILM-DEPOSITION PROCESS;
FILMS PROPERTIES;
HEXAMETHYL DISILOXANE;
INORGANIC CONTENT;
ION ENERGIES;
ION ENERGY;
IONS IMPINGING;
METAL SUBSTRATE;
NANO-SCRATCH;
PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION;
PLASMA POTENTIAL;
RADIO FREQUENCIES;
RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RF PLASMA;
RF-POWER;
SCRATCH RESISTANCE;
SELF BIAS VOLTAGE;
SURFACE PROTECTION;
XPS ANALYSIS;
BELLS;
BIAS VOLTAGE;
CHEMICAL VAPOR DEPOSITION;
DC POWER TRANSMISSION;
DEPOSITION;
GLOW DISCHARGES;
IONS;
METAL ANALYSIS;
NANOINDENTATION;
OXIDE FILMS;
PHOTOELECTRON SPECTROSCOPY;
PLASMA DIAGNOSTICS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
QUARTZ;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON OXIDES;
STRUCTURE (COMPOSITION);
SUBSTRATES;
THERMOGRAVIMETRIC ANALYSIS;
VANADIUM;
X RAY PHOTOELECTRON SPECTROSCOPY;
PLASMA DEPOSITION;
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EID: 80052136868
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.05.079 Document Type: Article |
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Times cited : (14)
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References (28)
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