Optimisation of junction termination extension for the development of a 2000 V planar 4H-SiC diode

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 1231-1235

  Perez R ^a   Mestres, N ^a   Jorda X ^b   Godignon, P ^b   Pascual, J ^c  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

High power electronics; Implantation; Silicon carbide; Simulation

Indexed keywords

ELECTRIC FIELDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

JUNCTION TERMINATION EXTENSION (JTE);

SEMICONDUCTOR DIODES;

DIAMOND;

EID: 0037508545     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00283-2     Document Type: Article

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