Dislocation defect based model analysis for the pre-breakdown reverse characteristics of 4H-SiC p+n diodes

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7935-7938

  Zheng, L ^a   Joshi, R P ^a   Fazi, C ^b  

^a Old Dominion University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC BREAKDOWN OF SOLIDS; IMPACT IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

PRE-BREAKDOWN REVERSE CHARACTERISTICS;

SEMICONDUCTOR DIODES;

EID: 0032615129     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370611     Document Type: Article

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