Basal plane partial dislocations in silicon carbide

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 160-164

  Blumenau, A T ^a   Jones, R ^b   Oberg S ^c   Briddon, P R ^d   Frauenheim, T ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Dislocations; Electronic structure; Glide motion; Silicon carbide

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; COMPUTATIONAL METHODS; DISLOCATIONS (CRYSTALS); ELASTICITY; ELECTRONIC STRUCTURE; HYDROGENATION; PROBABILITY DENSITY FUNCTION; STACKING FAULTS;

RECOMBINATION ENHANCED DISLOCATION GLIDE MECHANISM (REDG); SHOCKLEY PARTIAL DISLOCATIONS;

SILICON CARBIDE;

EID: 0345873488     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.046     Document Type: Conference Paper

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