On the data analysis of light-biased photoconductance decay measurements

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1491-1496

  Aberle, Armin G ^a   Schmidt, Jan ^a   Brendel, Rolf ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRONS; ERROR ANALYSIS; INTEGRATION; PASSIVATION; SIGNAL TO NOISE RATIO; SILICA; SILICON NITRIDE; SILICON WAFERS; SURFACES; VELOCITY MEASUREMENT;

BIAS LIGHT; BULK CARRIER LIFETIME; PHOTOCONDUCTANCE DECAY; SURFACE RECOMBINATION VELOCITY;

ELECTROOPTICAL EFFECTS;

EID: 0030087214     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360990     Document Type: Article

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