Effect of steady bias light on carrier lifetime in silicon wafers with chemically passivated surfaces

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 2 A, 1996, Pages

  Maekawa, Takao ^a   Shima, Yasushi ^a  

^a CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; EDDY CURRENTS; ETHANOL; IODINE; LIGHT; PASSIVATION; SOLUTIONS; SURFACES; VELOCITY;

BULK CARRIER LIFETIME; CARRIER RECOMBINATION; CONTACTLESS MEASUREMENT; PHOTOCONDUCTIVE VOLTAGE DECAY; PHOTOINDUCED EXCESS CARRIERS; STEADY BIAS LIGHT;

SILICON WAFERS;

EID: 0030085810     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.L133     Document Type: Article

References (7)