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Volumn 509, Issue 39, 2011, Pages 9528-9535

An XANES and XES investigation of the electronic structure of indium rich InxGa1-xN films

(8) Demchenko, I N a,b,c Chernyshova, M d Piskorska Hommel, E c,e Minikayev, R c Domagala, J Z c Yamaguchi, T f Stolte, W C a,b Lawniczak Jablonska, K c

a UNIVERSITY OF NEVADA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c INSTITUTE OF PHYSICS (Poland)

d SOLTAN INSTITUTE FOR NUCLEAR STUDIES (Poland)

e UNIVERSITY OF BREMEN (Germany)

f RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

FEFF; XANES; XES

Indexed keywords

BAND-GAP VALUES; CORE HOLE; FEFF; INDIUM CONTENT; INGAN ALLOY; LINEAR POLARIZATION; LOCAL DENSITY OF STATE; PARTIAL DENSITY OF STATE; SAPPHIRE SUBSTRATES; WURTZITE STRUCTURE; X-RAY EMISSION; XANES; XES;

ABSORPTION; ANISOTROPY; DENSITY FUNCTIONAL THEORY; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM; GALLIUM COMPOUNDS; INDIUM; INDIUM ALLOYS; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 80052035521 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.07.059 Document Type: Article

Times cited : (5)

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