Magnetic properties of Mn-doped GaN with defects: Ab-initio calculations

Chinese Physics B

Volumn 20, Issue 8, 2011, Pages

  Salmani, E ^a   Benyoussef, A ^a   Ez Zahraouy, H ^a   Saidi, E H ^b  

^a FACULTÉ DES SCIENCES   (Morocco)

^b MOHAMMED V UNIVERSITY   (Morocco)

Author keywords

ab initio; defects; diluted magnetic semiconductor; GaN:Mn; magnetic properties

Indexed keywords

AB INITIO; AB INITIO CALCULATIONS; ANTIFERRO-MAGNETIC INTERACTIONS; CO-DOPING; DILUTED MAGNETIC SEMICONDUCTORS; DOUBLE EXCHANGE; DOUBLE EXCHANGE MECHANISM; FERROMAGNETIC COUPLING; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; FORMATION ENERGIES; GAN:MN; HALF-METALLIC; HIGH SPIN STATE; MAGNETIC INTERACTIONS; MN-DOPED GAN; MODEL-BASED OPC; NITROGEN IONS; NITROGEN VACANCIES;

ANTIFERROMAGNETISM; CALCULATIONS; DEFECTS; FERROMAGNETIC MATERIALS; GALLIUM NITRIDE; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MANGANESE; MANGANESE COMPOUNDS; NITROGEN; OXYGEN; VACANCIES;

FERROMAGNETISM;

EID: 80051876100     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/8/086601     Document Type: Article

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