Ab initio study of the magnetism in GaAs, GaN, ZnO, and ZnTe-based diluted magnetic semiconductors

Journal of Magnetism and Magnetic Materials

Volumn 258-259, Issue , 2003, Pages 248-250

  Uspenskii, Yu ^a   Kulatov, E ^b   Mariette, H ^c   Nakayama, H ^d   Ohta, H ^e  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^c UNIV GRENOBLE ALPES   (France)

^d Osaka Prefecture University   (Japan)

^e KOBE UNIVERSITY   (Japan)

Author keywords

Electronic structure; Magnetic ordering; Magnetic semiconductors

Indexed keywords

ANTIFERROMAGNETISM; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; FERROMAGNETISM; GALLIUM NITRIDE; MAGNETIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

CODOPING;

MAGNETIC SEMICONDUCTORS;

EID: 0037337113     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(02)01033-8     Document Type: Conference Paper

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