InAlAs avalanche photodiode with type-II superlattice absorber for detection beyond 2 μm

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 486-489

  Ong, Daniel S G ^a   Ng, Jo Shien ^a   Goh, Yu Ling ^a   Tan, Chee Hing ^a   Zhang, Shiyong ^b   David, John P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Engineering and Physical Sciences Research Council UK   (United Kingdom)

Author keywords

Avalanche photodiode (APD); infrared; quantum well (QW); superlattice; type II

Indexed keywords

BREAKDOWN VOLTAGE; CUTOFF WAVELENGTHS; INALAS; INFRARED; INP; LATTICE-MATCHED; OPTICAL AND ELECTRICAL CHARACTERIZATION; QUANTUM WELL; RESPONSIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE STABILITY; TYPE II; TYPE-II SUPERLATTICES;

AVALANCHE PHOTODIODES; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

PHOTODIODES;

EID: 79151477901     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2090352     Document Type: Article

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