Multi-decade GaN HEMT cascode-distributed power amplifier with baseband performance

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2009, Pages 369-372

  Kobayashi, Kevin W ^a   Chen, YaoChung ^b   Smorchkova, Ioulia ^b   Heying, Benjamin ^b   Luo, Wen Ben ^b   Sutton, William ^b   Wojtowicz, Mike ^b   Oki, Aaron ^b  

^a RF Micro Devices   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Cascode; Distributed amplifier; GaAs PHEMT; GaN HEMT; Low Noise Amplifier (LNA); Power Amplifier (PA)

Indexed keywords

CASCODE; DISTRIBUTED AMPLIFIER; GAAS PHEMT; GAN HEMT; LOW NOISE AMPLIFIER (LNA);

AUDIO FREQUENCY AMPLIFIERS; BROADBAND AMPLIFIERS; DIGITAL INTEGRATED CIRCUITS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MICROWAVE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; POWER TRANSMISSION; RADIO; RADIO WAVES; SEMICONDUCTING GALLIUM; WIRELESS TELECOMMUNICATION SYSTEMS;

RADIO FREQUENCY AMPLIFIERS;

EID: 70350238376     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2009.5135560     Document Type: Conference Paper

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