Electrochemical grafting on SOI substrates using aryl diazonium salts

Journal of Electroanalytical Chemistry

Volumn 660, Issue 1, 2011, Pages 127-132

  Le Floch, Fabien ^a   Matheron, Muriel ^a   Vinet, Franoise ^a  

^a CEA GRENOBLE   (France)

Author keywords

Diazonium; Electrochemistry; Electrografting; Silicon; SOI; Surface modification

Indexed keywords

ELECTROCHEMISTRY; ELECTRON AFFINITY; PHOSPHORUS; SALTS; SURFACE TREATMENT;

ARYLDIAZONIUM SALTS; BULK SILICON; DIAZONIUM; DOPING DENSITIES; ELECTROCHEMICAL CHARACTERISTICS; ELECTROCHEMICAL GRAFTING; ELECTROGRAFTING; GEOMETRICAL EFFECT; GRAFTING PROCESS; ORGANIC LAYERS; ORGANIC/INORGANIC; PEAK POTENTIALS; SILICON SURFACES; SOI; SOI SUBSTRATES; THIN SILICON LAYERS;

GRAFTING (CHEMICAL);

EID: 80051793472     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2011.06.018     Document Type: Article

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