GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 966-970

  Lee, Chul Ho ^a,b   Hong, Young Joon ^a,b   Kim, Yong Jin ^a,b   Yoo, Jinkyoung ^a,b   Baek, Hyeonjun ^a   Jeon, Seong Ran ^c   Lee, Seung Jae ^c   Yi, Gyu Chul ^a  

^a Seoul National University   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Light emitting diode (LED); nanoepitaxy; nanophotonics; Si; ZnO

Indexed keywords

COAXIAL NANOTUBES; CRACK FREE; ELECTROLUMINESCENCE SPECTRA; GREEN LIGHT; HIGH QUALITY; LUMINESCENT CHARACTERISTICS; NANO-STRUCTURED; NANOEPITAXY; P-N HOMOJUNCTIONS; SI SUBSTRATES; ZNO; ZNO NANOTUBE;

CRYSTALS; DIODES; EPITAXIAL GROWTH; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; NANOPHOTONICS; NANOTUBES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; ZINC OXIDE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80051696570     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2062493     Document Type: Article

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