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Volumn 84, Issue 3, 2011, Pages

Identification of the main contributions to the conductivity of epitaxial InN

Author keywords

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Indexed keywords


EID: 79961243363     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.035205     Document Type: Article
Times cited : (11)

References (17)
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  • 5
    • 41649095482 scopus 로고    scopus 로고
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    • DOI 10.1063/1.2906374
    • X. Wang, S.-B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2906374 92, 132108 (2008). (Pubitemid 351483649)
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  • 8
    • 33745512325 scopus 로고    scopus 로고
    • Origin of the n-type conductivity of InN: The role of positively charged dislocations
    • DOI 10.1063/1.2214156
    • L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2214156 88, 252109 (2006). (Pubitemid 43959084)
    • (2006) Applied Physics Letters , vol.88 , Issue.25 , pp. 252109
    • Piper, L.F.J.1    Veal, T.D.2    McConville, C.F.3    Lu, H.4    Schaff, W.J.5
  • 10
    • 37349071024 scopus 로고    scopus 로고
    • Decomposition of InN at high pressures and temperatures and its thermal instability at ambient conditions
    • DOI 10.1016/j.jcrysgro.2007.10.037, PII S0022024807008883
    • H. Saitoh, W. Utsumi, and K. Aoki, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2007.10.037 310, 473 (2008). (Pubitemid 350297261)
    • (2008) Journal of Crystal Growth , vol.310 , Issue.2 , pp. 473-476
    • Saitoh, H.1    Utsumi, W.2    Aoki, K.3
  • 15
    • 0014832896 scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.2.928
    • R. D. Brown, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.2.928 2, 928 (1970).
    • (1970) Phys. Rev. B , vol.2 , pp. 928
    • Brown, R.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.