Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1877-1881

  Hasanuzzaman, Md ^a   Islam, Syed K ^a,b   Tolbert, Leon M ^a,b   Alam, Mohammad T ^a  

^a University of Tennessee Knoxville   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

High temperature MOSFET; Silicon carbide; Temperature variation effect

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICON CARBIDE; THRESHOLD VOLTAGE;

ELECTRON SATURATED DRIFT VELOCITY; INTRINSIC CARRIER CONCENTRATION; MELTING POINTS; SOURCE CONTACT REGION RESISTANCE;

MOSFET DEVICES;

EID: 3142678981     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.029     Document Type: Conference Paper

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