Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility channel metal-oxide- semiconductor field-effect transistors

Journal of Electronic Materials

Volumn 35, Issue 8, 2006, Pages 1607-1612

  Dey, S ^a   Joshi, S ^a   Garcia Gutierrez, D ^a   Chaumont, M ^b   Campion, A ^b   Jose Yacaman, M ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Germanium on silicon; Heterostructure; High mobility metal oxide semiconductor field effect transistor (MOSFET); Ultra high vacuum chemical vapor deposition (UHVCVD)

Indexed keywords

CAPACITANCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOS CAPACITORS; MOSFET DEVICES; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

GERMANIUM ON SILICON; HIGH-MOBILITY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET); ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

SEMICONDUCTING GERMANIUM;

EID: 33748714132     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0205-y     Document Type: Article

References (16)

1. J.L. Hoyt, H. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. Fitgzerald, and D. Antoniadis, IEDM Tech. Dig., pp. 23-26 (2002).
2. S. Verdonckt-Vanderbroek, E.F. Crabbe, B.S. Meyerson, D.K. Harame, P.J. Restle, J.M.C. Stork, and J.B. Johnson, IEEE Trans. Elec. Dev. 41, 90 (1992).
3. S.K. Ray, S. John, S. Oswal, and S.K. Banerjee, IEDM Tech. Dig. (San Francisco, CA: IEEE, 1996), pp. 261-264.
4. D. Cui and B. Ramanthan, Triplett P. McIntyre, and K. Saraswat, Device Research Conf. Proc. (SaltLake City, UT: IEEE, 2002), pp. 191-192.
5. C.O. Chui, H. Kim, P.C. McIntyre, and K.C. Saraswat, IEDM Tech. Dig. (Washington, DC: IEEE, 2003), pp. 18.3.1-18.3.4.
6. H.S. Hang, K.-L. Lee, P. Kozlowski, C. D'Emic, I. Babich, E. Sikorski, M. Ieong, H.-S.P. Wong, K. Guarini, and W. Haensch, IEEE Elec. Dev. Lett. 25, 135 (2004).
7. N. Wu, Q. Zhang, C. Zhu, D.S.H. Chan, A. Du, N. Balasubramanian, M.F. Li, A. Chin, J.K.O. Sin, and D.-L. Kwong, IEEE Elec. Dev. Lett. 25, 631 (2004).
8. M.L. Lee, C.W. Leite, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G. Taraschi, and EA Fitzgerald, Appl. Phys. Lett. 79, 2815 (2001).
9. A. Ritenour, S. Yu, M.L. Lee, N. Lu, W. Bai, A. Pitera, E.A. Fitzgerald, D.L. Kwong, and D.A. Antoniadis, IEDM Tech. Dig. (Washington, DC: IEEE, 2003), pp. 18.2.1-18.2.4.
10. C. Li, S. John, and S. Banerjee, J. Vac. Sci, Technol., A 14, 170 (1996).
11. S.R. Stiffier, J.H. Comfort, C.L. Stank, D.L. Harame, E. de Fresart, and B.S. Meyerson, J. Appl. Phys. 70, 1416 (1991).
12. K. Kima and Y.H. Lee, Appl. Phys. Lett. 67, 9 (1995).
13. T.H. Yang, G.L. Luo, E.Y. Chang, Y.C. Hsieh, and C.Y. Chang, J. Vac. Sci. Technol., B 22, L17 (2004).
14. T. S. Kuan, C. K. Inoki, Y. Hsu, D. L. Harris, R. Zhang, S. Gu, and T. F. Kuech, MRS Internet J. Nitride Semicond. Res. 5S1, W2.6 (2000).
15. A. Nayfeh, C.O. Chui, T. Yonehara, and K. Saraswat, IEEE Electron Dev. Lett. 26, 311 (2005).
16. M.L. Lee, C.W. Leitz, Z. Cheng, A.J. Pitera, T. Langdo, M.T. Currie, G. Taraschi, and E.A. Fitzgerald, Appl. Phys. Lett. 14, 3344 (2001).