Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

Thin Solid Films

Volumn 497, Issue 1-2, 2006, Pages 157-162

  Ai, Bin ^a   Shen, Hui ^a   Liang, Zongcun ^b   Chen, Zhi ^b   Kong, Guanglin ^c   Liao, Xianbo ^c  

^a SUN YAT SEN UNIVERSITY   (China)

^b GUANGZHOU INSTITUTE OF ENERGY CONVERSION   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Chemical vapour deposition; Electrical properties and measurements; Polycrystalline silicon; Scanning electron microscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; HALL EFFECT; SILICON WAFERS; THIN FILMS;

ELECTRICAL PROPERTIES AND MEASUREMENT; FILM THICKNESS; QUARTZ SUBSTRATES; TRAPPING STATE DENSITY;

POLYSILICON;

EID: 30344485152     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.10.069     Document Type: Article

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