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Volumn 99, Issue 4, 2011, Pages

High Q microcavity light emitting diodes with buried AlN current apertures

(9) Cheng, Bo Siao a Wu, Yun Lin a Lu, Tien Chang a Chiu, Ching Hsueh a Chen, Cheng Hung a Tu, Po Min a Kuo, Hao Chung a Wang, Shing Chung a Chang, Chun Yen a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALN; ALN LAYERS; CURRENT APERTURES; CURRENT BLOCKING LAYERS; DBR; DRIVING CURRENT; EMISSION PEAKS; HIGH-Q MICROCAVITY; INGAN/GAN; NARROW-LINE WIDTH; OPTICAL CONFINEMENT LAYERS; OPTICAL THICKNESS; Q-VALUES;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; MICROCAVITIES; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; TANTALUM OXIDES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79961041259 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3617418 Document Type: Article

Times cited : (21)

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