Growth of self-assembled InP quantum islands for red-light-emitting injection lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 6, Issue 3, 2000, Pages 482-490

  Porsche, Jörg ^a   Ost, Markus ^a   Scholz, Ferdinand ^a   Fantini, Angelo ^b   Phillipp, Fritz ^b   Riedl, Thomas ^c   Hangleiter, Andreas ^c  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; DEPOSITION; INJECTION LASERS; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

GALLIUM ARSENIDE SUBSTRATES; INDIUM PHOSPHIDE QUANTUM ISLANDS; SELF ASSEMBLED QUANTUM ISLANDS; STRANSKI-KRASTANOV GROWTH; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034187180     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.865103     Document Type: Article

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