SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer

(3) Jo, Masafumi a Mano, Takaaki a Sakoda, Kazuaki a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; DOT QUALITY; DROPLET EPITAXY; GAAS; MORPHOLOGICAL CONTROL; QUANTUM DOT; THERMALLY INDUCED DEFORMATIONS;

ALUMINUM GALLIUM ARSENIDE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78149434917 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3493262 Document Type: Article

Times cited : (18)

References (28)

1
- 33947328685
- APPLAB 0003-6951,. 10.1063/1.2712804
- I. K. Park, M. K. Kwon, S. B. Seo, J. Y. Kim, J. H. Lim, and S. J. Park, Appl. Phys. Lett. APPLAB 0003-6951 90, 111116 (2007). 10.1063/1.2712804
- (2007) Appl. Phys. Lett. , vol.90 , pp. 111116
- Park, I.K.¹ Kwon, M.K.² Seo, S.B.³ Kim, J.Y.⁴ Lim, J.H.⁵ Park, S.J.⁶

2
- 2342572865
- APPLAB 0003-6951,. 10.1063/1.1687979
- M. T. Todaro, M. D. Giorgi, M. D. Vittorio, R. Cingolani, and A. Passaseo, Appl. Phys. Lett. APPLAB 0003-6951 84, 2482 (2004). 10.1063/1.1687979
- (2004) Appl. Phys. Lett. , vol.84 , pp. 2482
- Todaro, M.T.¹ Giorgi, M.D.² Vittorio, M.D.³ Cingolani, R.⁴ Passaseo, A.⁵

3
- 56849100695
- APPLAB 0003-6951,. 10.1063/1.3026174
- T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, and K. Sakoda, Appl. Phys. Lett. APPLAB 0003-6951 93, 203110 (2008). 10.1063/1.3026174
- (2008) Appl. Phys. Lett. , vol.93 , pp. 203110
- Mano, T.¹ Kuroda, T.² Mitsuishi, K.³ Nakayama, Y.⁴ Noda, T.⁵ Sakoda, K.⁶

4
- 34250617559
- APPLAB 0003-6951,. 10.1063/1.2748082
- D. Guimard, Y. Arakawa, M. Ishida, S. Tsukamoto, M. Nishioka, Y. Nakata, H. Sudo, T. Yamamoto, and M. Sugawara, Appl. Phys. Lett. APPLAB 0003-6951 90, 241110 (2007). 10.1063/1.2748082
- (2007) Appl. Phys. Lett. , vol.90 , pp. 241110
- Guimard, D.¹ Arakawa, Y.² Ishida, M.³ Tsukamoto, S.⁴ Nishioka, M.⁵ Nakata, Y.⁶ Sudo, H.⁷ Yamamoto, T.⁸ Sugawara, M.⁹

5
- 33845521687
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.97.247701
- A. Martí, E. Antolín, C. R. Stanley, C. D. Farmer, N. Lopez, P. Díaz, E. Canovas, P. G. Linares, and A. Luque, Phys. Rev. Lett. PRLTAO 0031-9007 97, 247701 (2006). 10.1103/PhysRevLett.97.247701
- (2006) Phys. Rev. Lett. , vol.97 , pp. 247701
- Martí, A.¹ Antolín, E.² Stanley, C.R.³ Farmer, C.D.⁴ Lopez, N.⁵ Díaz, P.⁶ Canovas, E.⁷ Linares, P.G.⁸ Luque, A.⁹

6
- 0031164889
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.78.5014
- A. Luque and A. Martí, Phys. Rev. Lett. PRLTAO 0031-9007 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
- (1997) Phys. Rev. Lett. , vol.78 , pp. 5014
- Luque, A.¹ Martí, A.²

7
- 34249896418
- NPAHBY 1749-4885,. 10.1038/nphoton.2007.46
- A. J. Shields, Nat. Photonics NPAHBY 1749-4885 1, 215 (2007). 10.1038/nphoton.2007.46
- (2007) Nat. Photonics , vol.1 , pp. 215
- Shields, A.J.¹

8
- 33745048348
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.96.226106
- G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, R. Songmuang, G. Katsaros, O. G. Schmidt, and K. Kern, Phys. Rev. Lett. PRLTAO 0031-9007 96, 226106 (2006). 10.1103/PhysRevLett.96.226106
- (2006) Phys. Rev. Lett. , vol.96 , pp. 226106
- Costantini, G.¹ Rastelli, A.² Manzano, C.³ Acosta-Diaz, P.⁴ Songmuang, R.⁵ Katsaros, G.⁶ Schmidt, O.G.⁷ Kern, K.⁸

9
- 0037382745
- JCRGAE 0022-0248,. 10.1016/S0022-0248(02)02407-7
- K. Takehana, F. Pulizzi, A. Patane, M. Henini, P. C. Main, L. Eaves, D. Granados, and J. M. Garcia, J. Cryst. Growth JCRGAE 0022-0248 251, 155 (2003). 10.1016/S0022-0248(02)02407-7
- (2003) J. Cryst. Growth , vol.251 , pp. 155
- Takehana, K.¹ Pulizzi, F.² Patane, A.³ Henini, M.⁴ Main, P.C.⁵ Eaves, L.⁶ Granados, D.⁷ Garcia, J.M.⁸

10
- 0035956171
- APPLAB 0003-6951,. 10.1063/1.1420579
- P. B. Joyce, T. J. Krzyzewski, G. R. Bell, and T. S. Jones, Appl. Phys. Lett. APPLAB 0003-6951 79, 3615 (2001). 10.1063/1.1420579
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3615
- Joyce, P.B.¹ Krzyzewski, T.J.² Bell, G.R.³ Jones, T.S.⁴

11
- 25144468027
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2005.07.002
- S. J. Lee, J. O. Kim, S. K. Noh, J. W. Choe, and K. S. Lee, J. Cryst. Growth JCRGAE 0022-0248 284, 39 (2005). 10.1016/j.jcrysgro.2005.07.002
- (2005) J. Cryst. Growth , vol.284 , pp. 39
- Lee, S.J.¹ Kim, J.O.² Noh, S.K.³ Choe, J.W.⁴ Lee, K.S.⁵

12
- 79956051001
- APPLAB 0003-6951,. 10.1063/1.1500778
- F. Ferdos, S. Wang, Y. Wei, A. Larsson, M. Sadeghi, and Q. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 81, 1195 (2002). 10.1063/1.1500778
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1195
- Ferdos, F.¹ Wang, S.² Wei, Y.³ Larsson, A.⁴ Sadeghi, M.⁵ Zhao, Q.⁶

13
- 12844275998
- APPLAB 0003-6951,. 10.1063/1.1831564
- Q. Gong, P. Offermans, R. Notzel, P. M. Koenraad, and J. H. Wolter, Appl. Phys. Lett. APPLAB 0003-6951 85, 5697 (2004). 10.1063/1.1831564
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5697
- Gong, Q.¹ Offermans, P.² Notzel, R.³ Koenraad, P.M.⁴ Wolter, J.H.⁵

14
- 0000354388
- APPLAB 0003-6951,. 10.1063/1.119772
- J. M. García, G. Mederios-Riverio, K. Schmidt, T. Ngo, J. L. Feng, A. Lorke, J. Kotthaus, and P. M. Petroff, Appl. Phys. Lett. APPLAB 0003-6951 71, 2014 (1997). 10.1063/1.119772
- (1997) Appl. Phys. Lett. , vol.71 , pp. 2014
- García, J.M.¹ Mederios-Riverio, G.² Schmidt, K.³ Ngo, T.⁴ Feng, J.L.⁵ Lorke, A.⁶ Kotthaus, J.⁷ Petroff, P.M.⁸

15
- 45849155571
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.87.256101
- A. Rastelli, M. Kummer, and H. von Kanel, Phys. Rev. Lett. PRLTAO 0031-9007 87, 256101 (2001). 10.1103/PhysRevLett.87.256101
- (2001) Phys. Rev. Lett. , vol.87 , pp. 256101
- Rastelli, A.¹ Kummer, M.² Von Kanel, H.³

16
- 0026413132
- JCRGAE 0022-0248,. 10.1016/0022-0248(91)91064-H
- N. Koguchi, S. Takahashi, and T. Chikyow, J. Cryst. Growth JCRGAE 0022-0248 111, 688 (1991). 10.1016/0022-0248(91)91064-H
- (1991) J. Cryst. Growth , vol.111 , pp. 688
- Koguchi, N.¹ Takahashi, S.² Chikyow, T.³

17
- 0027589857
- JAPNDE 0021-4922,. 10.1143/JJAP.32.2052
- N. Koguchi and K. Ishige, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 32, 2052 (1993). 10.1143/JJAP.32.2052
- (1993) Jpn. J. Appl. Phys., Part 1 , vol.32 , pp. 2052
- Koguchi, N.¹ Ishige, K.²

18
- 0342758562
- JAPLD8 0021-4922,. 10.1143/JJAP.39.L79
- K. Watanabe, N. Koguchi, and Y. Gotoh, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 39, L79 (2000). 10.1143/JJAP.39.L79
- (2000) Jpn. J. Appl. Phys., Part 2 , vol.39 , pp. 79
- Watanabe, K.¹ Koguchi, N.² Gotoh, Y.³

19
- 20144389395
- NALEFD 1530-6984,. 10.1021/nl048192+
- T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai, T. Tateno, J. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, and N. Koguchi, Nano Lett. NALEFD 1530-6984 5, 425 (2005). 10.1021/nl048192+
- (2005) Nano Lett. , vol.5 , pp. 425
- Mano, T.¹ Kuroda, T.² Sanguinetti, S.³ Ochiai, T.⁴ Tateno, T.⁵ Kim, J.⁶ Noda, T.⁷ Kawabe, M.⁸ Sakoda, K.⁹ Kido, G.¹⁰ Koguchi, N.¹¹

20
- 61749103756
- CGDEFU 1528-7483,. 10.1021/cg701142d
- J. H. Lee, Z. M. Wang, Z. Y. AbuWaar, and G. J. Salamo, Cryst. Growth Des. CGDEFU 1528-7483 9, 715 (2009). 10.1021/cg701142d
- (2009) Cryst. Growth Des. , vol.9 , pp. 715
- Lee, J.H.¹ Wang, Z.M.² Abuwaar, Z.Y.³ Salamo, G.J.⁴

21
- 77950635231
- APECE4 1882-0778,. 10.1143/APEX.3.045502
- M. Jo, T. Mano, and K. Sakoda, Appl. Phys. Express APECE4 1882-0778 3, 045502 (2010). 10.1143/APEX.3.045502
- (2010) Appl. Phys. Express , vol.3 , pp. 045502
- Jo, M.¹ Mano, T.² Sakoda, K.³

22
- 34249052947
- APPLAB 0003-6951,. 10.1063/1.2737123
- C. Heyn, A. Stemmann, A. Schramm, H. Welsch, W. Hansen, and. Nemcsics, Appl. Phys. Lett. APPLAB 0003-6951 90, 203105 (2007). 10.1063/1.2737123
- (2007) Appl. Phys. Lett. , vol.90 , pp. 203105
- Heyn, C.¹ Stemmann, A.² Schramm, A.³ Welsch, H.⁴ Hansen, W.⁵ Nemcsics, .⁶

23
- 78149417722
- The streaks in the AFM image of the 580 °C -annealed QDs are the mounds in the AlGaAs buffer layer.
- The streaks in the AFM image of the 580 °C -annealed QDs are the mounds in the AlGaAs buffer layer.

24
- 0038270887
- APPLAB 0003-6951,. 10.1063/1.109995
- L. Olmsted and S. N. Houde-Walter, Appl. Phys. Lett. APPLAB 0003-6951 63, 530 (1993). 10.1063/1.109995
- (1993) Appl. Phys. Lett. , vol.63 , pp. 530
- Olmsted, L.¹ Houde-Walter, S.N.²

25
- 0000972714
- APPLAB 0003-6951,. 10.1063/1.125019
- S. Fafard and C. N. Allen, Appl. Phys. Lett. APPLAB 0003-6951 75, 2374 (1999). 10.1063/1.125019
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2374
- Fafard, S.¹ Allen, C.N.²

26
- 34547379220
- JAPIAU 0021-8979,. 10.1063/1.2752598
- H. Sasakura, S. Kayamori, S. Adachi, and S. Muto, J. Appl. Phys. JAPIAU 0021-8979 102, 013515 (2007). 10.1063/1.2752598
- (2007) J. Appl. Phys. , vol.102 , pp. 013515
- Sasakura, H.¹ Kayamori, S.² Adachi, S.³ Muto, S.⁴

27
- 31144464368
- JVTBD9 1071-1023,. 10.1116/1.1949216
- Y. Sakuma, M. Takeguchi, K. Takemoto, S. Hirose, T. Usuki, and N. Yokoyama, J. Vac. Sci. Technol. B JVTBD9 1071-1023 23, 1741 (2005). 10.1116/1.1949216
- (2005) J. Vac. Sci. Technol. B , vol.23 , pp. 1741
- Sakuma, Y.¹ Takeguchi, M.² Takemoto, K.³ Hirose, S.⁴ Usuki, T.⁵ Yokoyama, N.⁶

28
- 76749096008
- APPLAB 0003-6951,. 10.1063/1.3303979
- J. G. Keizer, J. Bocquel, P. M. Koenraad, T. Mano, T. Noda, and K. Sakoda, Appl. Phys. Lett. APPLAB 0003-6951 96, 062101 (2010). 10.1063/1.3303979
- (2010) Appl. Phys. Lett. , vol.96 , pp. 062101
- Keizer, J.G.¹ Bocquel, J.² Koenraad, P.M.³ Mano, T.⁴ Noda, T.⁵ Sakoda, K.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.