Low threshold InP/AlGalnP quantum dot in-plane laser emitting at 638 nm

Applied Physics Express

Volumn 2, Issue 11, 2009, Pages

  Schulz, Wolfgang Michael ^a   Eichfelder, Marcus ^a   Roßbach, Robert ^a   Jetter, Michael ^a   Michler, Peter ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; IN-PLANE; INP QUANTUM DOTS; LASER EMITTING; LASER STRUCTURES; LASING WAVELENGTH; LOW THRESHOLD CURRENT DENSITY; LOW THRESHOLDS; METALORGANIC VAPOR PHASE EPITAXY; OPTICAL OUTPUT; P-MATRICES; PULSED LASER OPERATION; QUANTUM DOT; ROOM TEMPERATURE;

CRYSTAL GROWTH; GALLIUM; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; ORGANIC LASERS; PULSED LASER APPLICATIONS; PULSED LASERS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 73249140542     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.112501     Document Type: Article

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