Effect of oxygen partial pressure contents on the properties of al-doped ZnO thin films prepared by radio frequency sputtering

Journal of Ceramic Processing Research

Volumn 12, Issue 2, 2011, Pages 150-154

  Hwang, Dong Hyun ^a   Ahn, Jung Hoon ^a   Hui, Kwan Nam ^a   Hui, Kwan San ^b   Son, Young Guk ^a  

^a Pusan National University   (South Korea)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Al doped ZnO film; Magnetron sputtering; Oxygen partial pressure

Indexed keywords

EID: 79961007836     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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