Nanometer-scale mapping of the strain and Ge content of Ge/Si quantum dots using enhanced Raman scattering by the tip of an atomic force microscope

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 8, 2011, Pages

  Ogawa, Y ^a   Toizumi, T ^a   Minami, F ^a   Baranov, A V ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b ITMO UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79960999867     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.081302     Document Type: Article

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