Evolution of E-centers during the annealing of Sb-doped Si 0.8Ge0.2

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 9, 2011, Pages

  Kilpelainen S ^a   Tuomisto, F ^a   Slotte, J ^a   Hansen, J Lundsgaard ^b   Larsen, A Nylandsted ^b  

^a AALTO UNIVERSITY   (Finland)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79960988203     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.094115     Document Type: Article

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