Deep levels in SOI - Structures investigated by charge and capacitance DLTS

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 273-276

  Antonova, I V ^a   Stano J ^b   Naumova, O V ^a   Nikolaev, D V ^a   Popov, V P ^a   Skuratov, V A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BONDED INTERFACE; DEEP LEVEL; DLTS; IN-BAND; SI BAND GAP; SI FILMS; SILICON-ON-INSULATORS; SOI STRUCTURE; STATE DENSITIES; SUBSTRATE WAFER;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; ION IMPLANTATION; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

SILICON WAFERS;

EID: 78649869568     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924142     Document Type: Conference Paper

References (11)

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