SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 9, 1996, Pages 1401-1404

Modeling of saturation transconductance for short-channel MOSFETs

[No Author Info available]

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); LINEAR NETWORK SYNTHESIS; MOSFET DEVICES; OXIDES; TRANSCONDUCTANCE;

ANALOG CIRCUITS; CHANNEL LENGTH MODULATION; DRAIN BARRIER LOWERING; MOBILITY DEGRADATION; SATURATION TRANSCONDUCTANCE; SHORT CHANNEL MOSFETS; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030241042 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(96)00024-X Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.