Small signal and HF noise performance of 45 nm CMOS technology in mmW range

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2011, Pages

  Poulain, L ^a,b   Waldhoff, N ^a   Gloria, D ^b   Danneville, F ^a   Dambrine, G ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

CMOS 45nm; Millimeter wave measurement; noise model; S parameters; small signal model

Indexed keywords

BAND NOISE; BULK CMOS; CMOS 45NM; CMOS TECHNOLOGY; DOWN-SCALING; GHZ FREQUENCIES; HIGH-FREQUENCY NOISE; IN-LINE; MILLIMETER WAVE MEASUREMENT; MILLIMETER-WAVE RANGE; MINIMUM NOISE FIGURE; NOISE MODELS; NOISE PERFORMANCE; S -PARAMETERS; SI TECHNOLOGY; SMALL SIGNAL; SMALL SIGNAL MODEL; TRANSISTOR GATE LENGTH;

DIGITAL INTEGRATED CIRCUITS; MILLIMETER WAVES; NOISE FIGURE; RADIO; RADIO WAVES; SCATTERING PARAMETERS; TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 79960798972     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2011.5940646     Document Type: Conference Paper

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