Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1335-1342

  Torres Torres, Reydezel ^a   Murphy Arteaga, Roberto ^a   Reynoso Hernández, J Apolinar ^b  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b CENTRO DE INVESTIGACIÓN CIENTÍFICA Y DE EDUCACIÓN SUPERIOR DE ENSENADA   (Mexico)

Author keywords

Modeling; On wafer microwave measurements; Parameter extraction; RF CMOS

Indexed keywords

EQUIVALENT CIRCUITS; MICROWAVE DEVICES; MOSFET DEVICES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

ON WAFER MICROWAVE MEASUREMENTS; PARAMETER EXTRACTION; RF CMOS;

CMOS INTEGRATED CIRCUITS;

EID: 23944489970     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850644     Document Type: Article

References (10)

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