Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2028-2030

  Tajima, Jumpei ^a   Togashi, Rie ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Takada, Kazuya ^b   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

A plane sapphire; AlN; HVPE; In plane epitaxial relationship

Indexed keywords

A-PLANE SAPPHIRE; ALN; ALN LAYERS; ALN-LAYER GROWN; EPITAXIAL RELATIONSHIPS; HVPE; HYDRIDE VAPOR PHASE EPITAXY; IN-PLANE; LOW TEMPERATURES; PLANE SAPPHIRE; X RAY ROCKING CURVE;

HYDRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

SAPPHIRE;

EID: 79960740914     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000954     Document Type: Article

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