Growth of GaN on a-plane sapphire: In-plane epitaxial relationships and lattice parameters

Physica Status Solidi (B) Basic Research

Volumn 240, Issue 2, 2003, Pages 318-321

  Paskova, T ^a   Darakchieva, V ^a   Valcheva, E ^a   Paskov, P P ^a   Monemar, B ^a   Heuken, M ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344495501     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303368     Document Type: Conference Paper

References (7)

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