Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2194-2196

  Hammersley, S ^a   Badcock, T J ^a   Watson Parris, D ^a   Godfrey, M J ^a   Dawson, P ^a   Kappers, M J ^b   Humphreys, C J ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Droop; Efficiency; InGaN; Quantum well

Indexed keywords

CONTROLLING MECHANISM; DROOP; EMISSION SPECTRUMS; EXCITATION LEVELS; HIGH INJECTION; INGAN; INGAN LED; INGAN/GAN QUANTUM WELL; LOCALISATION; PHOTOLUMINESCENCE EMISSION; QUANTUM WELL; TEMPERATURE DEPENDENCE;

EFFICIENCY; EMISSION SPECTROSCOPY; GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

QUANTUM EFFICIENCY;

EID: 79960738386     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001001     Document Type: Article

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