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Journal of Analytical Atomic Spectrometry

Volumn 26, Issue 8, 2011, Pages 1604-1609

Minor elements determination and evaluation of diffusion/segregation effects on ultra-thin layers using pulsed-RF-GD-TOFMS

(6) Pisonero, J a Licciardello, A b Hierro Rodriguez A c Quiros C c Sanz Medel, A a Bordel, N a

a UNIVERSITY OF OVIEDO (Spain)

b UNIVERSITY OF CATANIA (Italy)

c CINN CSIC UNIOVI PA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL PERFORMANCE; ATOMIC CONCENTRATION; BI-LAYER; CO-QUANTIFICATION; CONSTANT THICKNESS; DC MAGNETRON SPUTTERING; DEPTH PROFILE; DEPTH-PROFILE ANALYSIS; INTERNAL LAYERS; ION SIGNALS; LINEAR CALIBRATION CURVE; MINOR ELEMENTS; REFERENCE TECHNIQUE; SI SUBSTRATES; SI WAFER; TIME-OF-FLIGHT MASS SPECTROMETERS; ULTRA-THIN; ULTRATHIN LAYERS;

ATOMS; GLOW DISCHARGES; MASS SPECTROMETERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SPECTROMETRY; STOICHIOMETRY;

NIOBIUM;

EID: 79960726605 PISSN: 02679477 EISSN: 13645544 Source Type: Journal
DOI: 10.1039/c1ja10075k Document Type: Conference Paper

Times cited : (17)

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