Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer

Applied Surface Science

Volumn 256, Issue 9, 2010, Pages 2731-2734

  El Asri, T ^a   Raissi, M ^b   Vizzini, S ^c   Maachi, A El ^a   Ameziane, E L ^a   d'Avitaya, F Arnaud ^b   Lazzari, J L ^b   Coudreau, C ^b   Oughaddou, H ^c,d   Aufray, B ^b   Kaddouri, A ^a  

^a FACULTÉ DES SCIENCES SEMLALIA   (Morocco)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c CNRS UMR 3299   (France)

^d UNIVERSITÉ DE CERGY PONTOISE   (France)

Author keywords

AES; Aluminum oxide layer; Cobalt; Diffusion; HR TEM; MIS structure; Silicon; SIPS

Indexed keywords

ALUMINA; AUGER ELECTRON SPECTROSCOPY; COBALT; DIFFUSION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BOMBARDMENT; OPTICAL EMISSION SPECTROSCOPY; SILICON; SYSTEM-IN-PACKAGE;

ANNEALING TEMPERATURES; DIFFUSION PROCESS; MIS STRUCTURE; OXIDE LAYER; SILICON DIFFUSION; SILICON THROUGH; SPUTTERED SPECIES; ULTRA-THIN;

ALUMINUM OXIDE;

EID: 75249094708     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.11.018     Document Type: Article

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