Effect of anti-diffusion oxide layer on enhanced thermal stability of magnetic tunnel junctions

Chinese Physics Letters

Volumn 23, Issue 4, 2006, Pages 932-935

  Zhang, Zong Zhi ^a   Zhao, Hui ^a   Cardoso, S ^b,c   Freitas, P P ^b,c  

^a FUDAN UNIVERSITY   (China)

^b INESC   (Portugal)

^c INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; MAGNESIA; MAGNETIC DEVICES; MAGNETITE; MANGANESE; MANGANESE OXIDE; OXIDATION; THERMODYNAMIC STABILITY; TUNNELLING MAGNETORESISTANCE;

AFTER HIGH TEMPERATURE; AL OXIDE; HIGH-TEMPERATURE ANNEALS; MAGNETIC FE OXIDES; MAGNETIC LAYERS; MAGNETIC TUNNEL JUNCTION; NONMAGNETICS; OXIDE LAYER; PINNED LAYERS; TUNNELING MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 33645543195     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/4/047     Document Type: Article

References (18)

1. Moodera J S et al 1995 Phys. Rev. Lett. 74 3273
2. Li F F et al 2005 Chin Phys. Lett. 222043
3. Parkin S S P et al 2004 Nat. Mater. 3 862
4. Daughton J M 1997 J. Appl. Phys. 81 3758
5. Sousa R C, Freitas P P and Chu V 1999 IEEE Trans. Magn. 35 2832
6. Cardoso S et al 2000 Appl. Phys. Lett. 76 610
7. Cardoso S et al 2000 Appl. Phys. Lett. 76 3792
8. Samant MG et al 2000 Appl. Phys. Lett. 76 3097
9. Lee J H et al 2002 J. Appl. Phys. 91 7472
10. Matsukawa N et al 2002 Appl. Phys. Lett. 81 4784
11. Fukumoto Y 2004 Appl. Phys. Lett. 84 233
12. Zhang Z Z et al 2001 J. Appl. Phys. 89 6665
13. Zhang Z Z et al 2001 Appl. Phys. Lett. 78 2911
14. Battle X et al 2003 J. Magn. Magn. Mater. 261 L305
15. Snoeck E et al 2004 J. Appl. Phys. 96 3307
16. Maesaka A et al 1998 J. Appl. Phys. 83 7628
17. Samant M G et al 2000 Appl. Phys. Lett. 76 3097
18. Samsonov G V 1982 The Oxide Handbook 2nd edn (New York: IFI/Plenum) p 45