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Physical Review Letters

Volumn 106, Issue 19, 2011, Pages

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions

(7) Teixeira, J M a Ventura, J a Araujo, J P a Sousa, J B a Wisniowski, P b Cardoso, S c Freitas, P P c

a UNIVERSITY OF PORTO (Portugal)

b AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Poland)

c INESC (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE STRUCTURE; ELECTRONIC TRAPPING; ENERGY LEVEL; INELASTIC ELECTRON TUNNELING SPECTROSCOPY; MGO BARRIER; THIN BARRIERS; TRAP ASSISTED TUNNELING; TUNNEL MAGNETORESISTANCE; VOLTAGE DEPENDENCE;

DEFECTS; ELECTRIC RESISTANCE; ELECTRONS; HIGH RESOLUTION ELECTRON MICROSCOPY; RESONANT TUNNELING; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79960645263 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.196601 Document Type: Article

Times cited : (51)

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