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Volumn 106, Issue 16, 2011, Pages

Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers

(9) Yang, Hyunsoo a Yang, See Hun b Qi, Dong Chen a Rusydi, Andrivo a Kawai, Hiroyo c Saeys, Mark a Leo, Titus d Smith, David J d Parkin, Stuart S P b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b IBM ALMADEN RESEARCH CENTER (United States)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EASY AXIS; EXPERIMENTAL OBSERVATION; FERROMAGNETIC ELECTRODES; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; NEGATIVE VALUES; NI ATOMS; NONCOLLINEAR; NONCOLLINEAR SPIN STRUCTURES; SPIN DENSITIES; TILTING ANGLE; TUNNEL BARRIER; TUNNELING MAGNETORESISTANCE; ULTRA-THIN; X-RAY MAGNETIC CIRCULAR DICHROISM;

BAND STRUCTURE; DICHROISM; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC MOMENTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SPECTROSCOPY;

TUNNEL JUNCTIONS;

EID: 79960643160 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.167201 Document Type: Article

Times cited : (32)

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