Reduction of hole transit time in GaAs MSM photodetectors by p-type δ-doping

IEEE Photonics Technology Letters

Volumn 8, Issue 11, 1996, Pages 1525-1527

  Chyi, Jen Inn ^a,b   Chien, Yi Jiunn ^b   Yuang, Rong Heng ^b   Shieh, Jia Lin ^b   Pan, Jen Wei ^b   Chen, Jyh Shin ^c  

^a IEEE

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; COMPOSITION EFFECTS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; LIGHT ABSORPTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR METAL BOUNDARIES;

HOLE TRANSPORT TIME;

PHOTODETECTORS;

EID: 0030291514     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.541571     Document Type: Article

References (9)

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