Silicon PV devices based on a single step for doping, anti-reflection and surface passivation

Solar Energy Materials and Solar Cells

Volumn 94, Issue 12, 2010, Pages 2205-2211

  Iyengar, Vikram V ^a   Nayak, Barada K ^a   Gupta, Mool C ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Crystalline silicon; Low cost process; Photovoltaics; Solar cell; Spin on dopants (SOD)

Indexed keywords

ANTI-REFLECTION; CRYSTALLINE SILICONS; DOPANT CONCENTRATIONS; DOPANT SOURCES; ELECTRODE CONFIGURATIONS; LOW COST PROCESS; MINORITY CARRIER LIFETIMES; PHOSPHORUS-DOPED; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; SERIES RESISTANCES; SI WAFER; SINGLE-STEP; SPIN-ON DOPANT; SURFACE PASSIVATION; TEXTURED SUBSTRATES;

CARRIER LIFETIME; CONVERSION EFFICIENCY; CRYSTALLINE MATERIALS; FABRICATION; PASSIVATION; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS;

DOPING (ADDITIVES);

EID: 77957659889     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.07.013     Document Type: Article

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