Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Optics Express

Volumn 19, Issue 15, 2011, Pages 14662-14670

  Liu, Yi Jung ^a   Huang, Chien Chang ^a   Chen, Tai You ^a   Hsu, Chi Shiang ^a   Liou, Jian Kai ^a   Tsai, Tsung Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; GOLD; INDIUM; LIGHT EMISSION; OHMIC CONTACTS; TIN;

CONTACT STRUCTURE; CURRENT SPREADING; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; LIGHT OUTPUT POWER; MG-DOPED; THERMAL-ANNEALING; TRANSPARENT FILMS;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79960545753     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.014662     Document Type: Article

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