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Volumn 110, Issue 1, 2011, Pages

Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-xN nanogroove

(2) Qu, Y a,b Ban, S L a,b

a INNER MONGOLIA UNIVERSITY (China)

b Universities of Inner Mongolia Autonomous Region (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND ENERGY; DIELECTRIC CONTINUUM; ELECTRON WAVE FUNCTIONS; FORCE BALANCE EQUATION; GAN LAYERS; GAN/INGAN; INGAN/GAN; NANOGROOVES; OPTICAL PHONON MODES; QUANTUM WELL; TERNARY MIXED CRYSTALS; WURTZITES;

ELECTRON MOBILITY; GALLIUM NITRIDE; PHONONS; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

ELECTRONS;

EID: 79960525054 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3608053 Document Type: Article

Times cited : (27)

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