Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2568-2573

  Li, J M ^a   Lu Y W ^b   Li, D B ^a   Han, X X ^a   Zhu, Q S ^a   Liu, X L ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b BEIJING JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; PHOTODETECTORS; PIEZOELECTRICITY; POISSON EQUATION; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

CONDUCTION BAND STRUCTURES; ELECTRON EIGENSTATES; INTERSUBBAND TRANSITION; INTERSUBBAND TRANSITION WAVELENGTH; PIEZOELECTRIC POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 13244251478     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1805543     Document Type: Article

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