Surface cleaning and etching of 4H-SiC(0001) using high-density atmospheric pressure hydrogen plasma

Journal of Nanoscience and Nanotechnology

Volumn 11, Issue 4, 2011, Pages 2802-2808

  Watanabe, Heiji ^a   Ohmi, Hiromasa ^a   Kakiuchi, Hiroaki ^a   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Yasutake, Kiyoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Atmospheric pressure plasma; Crystallographic structure; Etching; Hydrogen radical; Silicon carbide; Surface cleaning; Surface morphology

Indexed keywords

ATMOSPHERIC PRESSURE PLASMAS; CRYSTALLOGRAPHIC STRUCTURE; HIGH-RATE ETCHING; HYDROGEN PLASMAS; HYDROGEN RADICAL; ISOTROPIC ETCHING; POROUS CARBON ELECTRODES; SURFACE CORRUGATIONS;

ATMOSPHERIC PRESSURE; HYDROGEN; PLASMA DENSITY; PLASMAS; SILICON CARBIDE; SILICON WAFERS; SURFACE CLEANING; SURFACE MORPHOLOGY;

ETCHING;

HYDROGEN; INORGANIC COMPOUND; NANOMATERIAL; SILICON CARBIDE; SILICON DERIVATIVE;

ARTICLE; CHEMISTRY; MATERIALS TESTING; PARTICLE SIZE; PLASMA GAS; SURFACE PROPERTY; ULTRASTRUCTURE;

CARBON COMPOUNDS, INORGANIC; HYDROGEN; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; PLASMA GASES; SILICON COMPOUNDS; SURFACE PROPERTIES;

EID: 79960483336     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2011.3911     Document Type: Article

References (16)

1. M. L. White, S. Reggie, N. Naguib, K. Nicholson, J. Gilliland, and A. Walters, Mater. Sci. Forum 600, 839 (2009).
2. K. Hotta, K. Hirose, Y. Tanaka, K. Kawata, and O. Eryu, Mater. Sci. Forum 600, 823 (2009).
3. H. Hara, Y. Sano, H. Mimura, K. Arima, A. Kubota, K. Yagi, J. Murata, and K. Yamauchi, J. Electron. Mater. 35, L11 (2006).
4. J. Murata, A. Kubota, K. Yagi, Y. Sano, H. Hara, K. Arima, T. Okamoto, H. Mimura, and K. Yamauchi, Mater. Sci. Forum 600, 815 (2009).
5. F. Owman, C. Hallin, P. Martensson, and E. Janzen, J. Cryst. Growth 167, 391 (1996).
6. C. L. Frewin, C. Coletti, C. Riedl, U. Starke, and S. E. Saddow, Mater. Sci. Forum 615, 589 (2009).
7. K. Ueno, R. Asai, and T. Tsuji, IEEE Electron Device Lett. 19, 244 (1998).
8. A. Kawasuso, K. Kojima, M. Yoshikawa, H. Itoh, and K. Narumi, Appl. Phys. Lett. 76, 1119 (2000).
9. N. Sieber, B. F. Mantel, T. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, and D. Schmeiber, Appl. Phys. Lett. 78, 1216 (2001).
10. S. Dogan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, H. Morkoc, G. Li, and B. Ganguly, Appl. Phys. Lett. 85, 1547 (2004).
11. A. Constant, N. Camara, P. Godignon, and J. Camassel, Appl. Phys. Lett. 94, 063508 (2009).
12. M. Losurdo, G. Bruno, A. Brown, and T. H. Kim, Appl. Phys. Lett. 84, 4011 (2004).
13. Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada, Thin Solid Films 444, 138 (2003).
14. K. Yasutake, H. Ohmi, H. Kakiuchi, T. Wakamiya, and H. Watanabe, Jpn. J. Appl. Phys. 45, 3592 (2006).
15. H. Ohmi, H. Kakiuchi, N. Tawara, T. Wakamiya, T. Shimura, H. Watanabe, and K. Yasutake, Jpn. J. Appl. Phys. 45, 8424 (2006).
16. H. Watanabe, S. Okada, H. Ohmi, H. Kakiuchi, and K. Yasutake, Materials Research Society, Spring Meeting, San Francisco, CA (2006).