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Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5460-5464

Evidence for the formation of n+-GaAs layer in Pd/Ge ohmic contact to n-type GaAs

(6) Lee, Jong Lam a Kim, Yi Tae a Kwak, Joon Seop b Baik, Hong Koo b Uedono, Akira c Tanigawa, Shoichiro c

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Yonsei University (South Korea)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000759197 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.365572 Document Type: Article

Times cited : (9)

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