Enhancing the curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering

Nano Letters

Volumn 11, Issue 7, 2011, Pages 2584-2589

  Chen, Lin ^a   Yang, Xiang ^a   Yang, Fuhua ^a   Zhao, Jianhua ^a   Misuraca, Jennifer ^b   Xiong, Peng ^b   Von Molnár, Stephan ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Florida State University   (United States)

Author keywords

magnetic properties of nanostructures; Magnetic semiconductors; magnetotransport phenomena; molecularbeam epitaxy

Indexed keywords

FERROMAGNETIC SEMICONDUCTOR; FREE SURFACES; HALL EFFECT MEASUREMENT; HIGH TEMPERATURE; INTERSTITIALS; LOW TEMPERATURE ANNEALING; MAGNETIC PROPERTIES OF NANOSTRUCTURES; MAGNETO-TRANSPORT MEASUREMENT; MAGNETOTRANSPORT PHENOMENA; MN-DOPED; OPTIMAL STRUCTURES; WIRE WIDTH;

CURIE TEMPERATURE; HALL EFFECT; HIGH TEMPERATURE ENGINEERING; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; NANOWIRES; STRUCTURAL OPTIMIZATION; WIRE;

MANGANESE;

GALLIUM; MANGANESE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; MAGNETISM; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; TEMPERATURE;

ARSENICALS; GALLIUM; MAGNETICS; MANGANESE; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS; SURFACE PROPERTIES; TEMPERATURE;

EID: 79960210555     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201187m     Document Type: Article

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