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Physical Review Letters

Volumn 101, Issue 11, 2008, Pages

Mott relation for anomalous hall and nernst effects in Ga1-xMnxAs ferromagnetic semiconductors

(5) Pu, Yong a Chiba, Daichi b,c Matsukura, Fumihiro b,c Ohno, Hideo b,c Shi, Jing a

a UNIVERSITY OF CALIFORNIA (United States)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELDS; MAGNETIC MATERIALS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS;

ANOMALOUS HALL EFFECT; ANOMALOUS TRANSPORT; FERROMAGNETIC SEMICONDUCTORS; FERROMAGNETS; GA1-XMNXAS; INTRINSIC SPIN; NERNST EFFECTS; TRANSPORT COEFFICIENTS; ZERO MAGNETIC FIELDS;

MAGNETIC FIELD EFFECTS;

EID: 52149107830 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.101.117208 Document Type: Article

Times cited : (275)

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