Doping of low-temperature GaAs and GaMnAs with carbon

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4678-4680

  Schott, G M ^a   Ruster C ^a   Brunner, K ^a   Gould, C ^a   Schmidt, G ^a   Molenkamp, L W ^a   Sawicki, M ^b   Jakiela, R ^b   Barcz, A ^b   Karczewski, G ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON TUNNELING; HALL EFFECT; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS;

BEAM EQUIVALENT PRESSURE (BEP); BUFFER LAYERS; CURIE TEMPERATURE; ELECRICAL ACTIVATION;

GALLIUM COMPOUNDS;

EID: 19944372027     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819522     Document Type: Article

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