Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Eid, K F ^a   Sheu, B L ^a   Maksimov, O ^a   Stone, M B ^a,b   Schiffer, P ^a   Samarth, N ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC ORDERING TEMPERATURE; PATTERNED FERROMAGNETIC SEMICONDUCTOR HETEROSTRUCTURES; SPINTRONICS;

ANNEALING; CRYSTAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; SURFACES;

FERROMAGNETIC MATERIALS;

EID: 20844439166     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900938     Document Type: Article

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