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Journal of Applied Physics

Volumn 109, Issue 12, 2011, Pages

Oxygen incorporation effects in annealed epitaxial La (1-x)SrxMnO3 thin films

(6) Petrisor, T a,a,b Gabor, M S a,b Boulle, A c Bellouard, C b Tiusan, C a,b Pana, O d

a TECHNICAL UNIVERSITY OF CLUJ NAPOCA (Romania)

b INSTITUT JEAN LAMOUR (France)

c UNIVERSITY OF LIMOGES (France)

d National Institute for Research and Development of Molecular and Isotopic Technologies (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CATIONIC VACANCY; COERCIVE FIELD; IONIC RATIOS; OXYGEN EXCESS; OXYGEN INCORPORATION; OXYGEN STOICHIOMETRY; SINGLE CRYSTAL SUBSTRATES; SINGLE PHASE; SRTIO; TWO-REGIME; XPS MEASUREMENTS;

ARGON; EPITAXIAL GROWTH; MAGNETIC PROPERTIES; MANGANESE; MANGANESE OXIDE; OXYGEN; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STOICHIOMETRY; THIN FILMS;

OXYGEN VACANCIES;

EID: 79960198672 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596807 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.